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[会议论文] 作者：ZHOU Bin-quan,FU Guo-sheng,SUN Yong,
来源：2008年中国介入心脏病学大会 年份：2008
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,Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space
[期刊论文] 作者：Wen,Feng Zhang,Zhan-Wei Shen,Jun Chen,Ya-Wei He,Guo-Guo Yan,Xing-Fang Liu,Wan-Shun Zhao,Lei Wang,Guo-Sheng Sun,
来源：中国物理B（英文版） 年份：2019
10-kV 4H–SiC p-channel insulated gate bipolar transistors (IGBTs) are designed, fabricated, and characterized in this paper. The IGBTs have an active area of 2...
[期刊论文] 作者：Zhang,Sima Dimitrijev,Ji-Sheng Han,Guo-Guo Yan,Zheng-Xin Wen,Wan-Shun Zhao,Lei Wang,Xing-Fang Liu,Guo-Sheng Sun,
来源：中国物理B（英文版） 年份：2017
The interface properties and electrical characteristics of the n-type 4H-SiC planar and trench metal-oxidesemiconductor (MOS) capacitors are investigated by mea...
Radiofrequency catheter ablation of atrial fibrillation under CARTO-merge guidance:a middle term cli
[会议论文] 作者：JIANG Chen-yang,LU Duan,FU Guo-sheng,SUN Yong,SHENG Xia,FAN You-qi,ZHANG Zu-wen,ZHOU Bin-quan,LI Chang-ling,
来源：2008年中国介入心脏病学大会 年份：2008
...
Radiofrequency catheter ablation of atrial fibrillation under CARTO-merge guidance:a middle term cli
[会议论文] 作者：JIANG Chen-yang,LU Duan,FU Guo-sheng,SUN Yong,SHENG Xia,FAN You-qi,ZHANG Zu-wen,ZHOU Bin-quan,LI Chang-ling,
来源：2008年中国介入心脏病学大会 年份：2008
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