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[会议论文] 作者：GuoshengSun[1]LinDong[1]JunYu[2]GuoguoYan[1]XinheZhang[2]XiguangLi[2]ZhanguoWang[1],
来源：第十七届全国化合物半导体材料微波器件和光电器件学术会议 年份：2012
Wide-band gap 4H-SiC has been attracted much attention for high-power and high-temperature electronic devices due to its excellent electrical and thermal pr...
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