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[期刊论文] 作者：HU Shi-gang,WU Xiao-Feng,XI Zai-fang,
来源：中南大学学报（英文版） 年份：2012
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,Study on the drain bias effect on negative bias temperature instability degradation of an ultra-sho
[期刊论文] 作者：Cao Yan-Rong,Ma Xiao-Hua,Hao Yue,Hu Shi-Gang,
来源：中国物理B（英文版） 年份：2010
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[期刊论文] 作者：Liu Hong-Xia,Wu Xiao-Feng,Hu Shi-Gang,Shi Li-Chun,
来源：中国物理B（英文版） 年份：2010
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,Effect of substrate bias on negative bias temperature instability of ultra-deep sub-micro p-channel
[期刊论文] 作者：Cao Yan-Rong,Hao Yue,Ma Xiao-Hua,Hu Shi-Gang,
来源：中国物理B（英文版） 年份：2009
The effect of substrate bias on the degradation during applying a negative bias temperature (NBT) stress is studied in this paper. With a smaller gate voltage s...
[期刊论文] 作者：CAO Yan-Rong,HU Shi-Gang,MA Xiao-Hua,HAO Yue,
来源：中国物理快报（英文版） 年份：2008
Recovery phenomenon is observed under negative gate voltage stress which is smaller than the previous degradation stress. We focus on the drain current to study...
,Study on the degradation of NMOSFETs with ultra-thin gate oxide under channel hot electron stress a
[期刊论文] 作者：Hu Shi-Gang,Hao Yue,Ma Xiao-Hua,Cao Yan-Rong,Chen Chi,Wu Xiao-Feng,
来源：中国物理B（英文版） 年份：2009
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[期刊论文] 作者：HU Shi-Gang,HAO Yue,MA Xiao-Hua,CAO Yan-Rong,CHEN Chi,WU Xiao-Feng,
来源：中国物理快报(英文版) 年份：2009
Hot-carrier degradation for 90 nm gate length lightly-doped drain (LDD) NMOSFET with ultra-thin (1.4 nm) gate oxide is investigated under the low gate voltage s...
[期刊论文] 作者：QU Yu-xuan,WANG Bin,HU Shi-gang,WU Xiao-feng,LI Zhi-ming,TANG Zhi-jun,LI Jin,
来源：中南大学学报（英文版） 年份：2014
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[期刊论文] 作者：HU Shi-Gang,CAO Yan-Rong,HAO Yue,MA Xiao-Hua,CHEN Chi,WU Xiao-Feng,ZHOU Qing-Jun,
来源：中国物理快报（英文版） 年份：2008
Degradation of device under substrate hot-electron (SHE) and constant voltage direct-tunnelling (CVDT) stresses are studied using NMOSFET with 1.4-nm gate oxide...
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