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[期刊论文] 作者：HUANG Hui-Xiang,BI Da-Wei,PENG Chao,ZHANG Yan-Wei,ZHANG Zheng-Xuan,
来源：中国物理快报（英文版） 年份：2013
An anomalous total dose effect is observed in narrow-width devices fabricated in a 0.2μm partially-depleted silicon-on-insulator (SOI) technology.The previous...
,Enhanced Radiation Sensitivity in Short-Channel Partially Depleted Silicon-on-Insulator n-Type Meta
[期刊论文] 作者：PENG Chao,ZHANG Zheng-Xuan,HU Zhi-Yuan,HUANG Hui-Xiang,NING Bing-Xu,BI Da-Wei,
来源：中国物理快报（英文版） 年份：2013
The total ionizing dose effects of partially depleted silicon-on-insulator (SOI) transistors in a 0.13 μm technology are studied by 60 Co γ-ray irradiation.Ra...
,Utilizing a shallow trench isolation parasitic transistor to characterize the total ionizing dose e
[期刊论文] 作者：Peng Chao,Hu Zhi-Yuan,Ning Bing-Xu,Huang Hui-Xiang,Fan Shuang,Zhang Zheng-Xuan,Bi Da-Wei,
来源：中国物理B（英文版） 年份：2014
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