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[期刊论文] 作者:DOU Xiu-Ming,SUN Bao-Quan,HUANG She-Song,NI Hai-Qiao,NIU Zhi-Chuan, 来源:中国物理快报(英文版) 年份:2008
Excitation power-dependent micro-photoluminescence spectra and photon-correlation measurement are used to study the optical properties and photon statistics of...
[期刊论文] 作者:DOU Xiu-Ming,SUN Bao-Quan,XIONG Yong-Hua,HUANG She-Song,NI Hai-Qiao,NIU Zhi-Chuan, 来源:中国物理快报(英文版) 年份:2008
We investigate the temperature dependence of photoluminescence from single and ensemble InAs/GaAs quantum dots systematically. As temperature increases, the exc...
[期刊论文] 作者:Huang She-Song,Niu Zhi-Chuan,Zhan Feng,Ni nai-Qiao,Zhao Huan,Wu Dong-Hai,Sun Zheng, 来源:中国物理B(英文版) 年份:2008
We develop a modified two-step method of growing high-density and narrow size-distribution InAs/GaAs quantum dots (QDs) by molecular beam epitaxy.In the first s...
[期刊论文] 作者:Dou Xiu-Ming,Sun Bao-Quan,Huang She-Song,Ni Hai-Qiao,Niu Zhi-Chuan,Yang Fu-Hua,Jia Rui, 来源:中国物理B(英文版) 年份:2009
This paper studies the size dependence of biexciton binding energy in single quantum dots (QDs) by using atomic force microscopy and micro-photoluminescence mea...
[期刊论文] 作者:ZHAN Feng,WANG Hai-Li,HE Ji-Fang,WANG Juan,HUANG She-Song,NI Hai-Qiao,NIU Zhi-Chuan, 来源:中国物理快报(英文版) 年份:2012
[期刊论文] 作者:ZHAN Feng,WANG Hai-Li,HE Ji-Fang,WANG Juan,HUANG She-Song,NI Hai-Qiao,NIU Zhi-Chuan, 来源:中国物理快报(英文版) 年份:2011
According to the theory of optical films, we simulate the reflectivity of antireflection coatings(ARCS)for solar cells of Gao.51no.5P/GaAs/Ge based on an optica...
[期刊论文] 作者:HUANG She-Song,NIU Zhi-Chuan,NI Hai-Qiao,ZHAN Feng,ZHAO Huan,SUN Zheng,XIA Jian-Bai, 来源:中国物理快报(英文版) 年份:2007
Extremely low density inAs quantum dots (QDs) are grown by molecular beam droplet epitaxy.The gallium deposition amount is optimized to saturate exactly the exc...
[期刊论文] 作者:WANG Hai-Li,XIONG Yong-Hua,HUANG She-Song,NI Hai-Qiao,HE Zhen-nong,DOU Xiu-Ming,NIU Zhi-Chuan, 来源:中国物理快报(英文版) 年份:2009
We obtain low-density charged InAs quantum dots with an emission wavelength below 1μm using a low InAs growth rate.The quantum dots have a bimodal size distrib...
[期刊论文] 作者:DOU Xiu-Ming,SUN Bao-Quan,CHANG Xiu-Ying,XIONG Yong-Hua,HUANG She-Song,NI Hai-Qiao,NIU Zhi-Chuan, 来源:中国物理快报(英文版) 年份:2008
We report on the single photon emission from single InAs/GaAs self-assembled Stranski-Krastanow quantum dots up to 80 K under pulsed and continuous wave excitat...
[期刊论文] 作者:XIONG Yong-Hua,NIU Zhi-Chuan,DOU Xiu-Ming,SUN Bao-Quan,HUANG She-Song,NI Hai-Qiao,DU Yun,XIA Jian-Bai, 来源:中国物理快报(英文版) 年份:2009
Electrically driven single photon source based on single InAs quantum dot (QDs) is demonstrated. The device contains InAs QDs within a planar cavity formed betw...
[期刊论文] 作者:WU Bing-Peng,WU Dong-Hai,NI Hai-Qiao,HUANG She-Song,ZHAN Feng,XIONG Yong-Hua,XU Ying-Qiang,NIU Zhi-Chuan, 来源:中国物理快报(英文版) 年份:2007
We investigate the molecular beam epitaxy growth of metamorphic InxGa1-xAs materials(x up to 0.5)on GaAs substrates systematically.Optimization of structure des...
[期刊论文] 作者:DOU Xiu-Ming,SUN Bao-Quan,WANG Bao-Rui,MA Shan-Shan,ZHOU Rong,HUANG She-Song,NI Hai-Qiao,NIU Zhi-Chuan, 来源:中国物理快报(英文版) 年份:2008
We report a photoluminescence (PL) energy red-shift of single quantum dots(QDs)by applying an in-plane compressive uniaxial stress along the[110]direction at a...
[期刊论文] 作者:WANG Peng-Fei,XIONG Yong-Hua,WANG Hai-Li,HUANG She-Song,NI Hai-Qiao,XU Ying-Qiang,HE Zhen-Hong,NIU Zhi-Chuan, 来源:中国物理快报(英文版) 年份:2009
A bilayer stacked InAs/GaAs quantum dot structure grown by molecular beam epitaxy on an In0.05Ga0.95As metamorphic buffer is investigated.By introducing a InGaA...
[期刊论文] 作者:YANG Xiao-Hong,HAN Qin,NI Hai-Qiao,HUANG She-Song,DU Yun,PENG Hong-Ling,XIONG Yong-Hua,NIU Zhi-Chuan,, 来源:中国物理快报(英文版) 年份:2006
A resonant-cavity enhanced reflective optical modulator is designed and fabricated, with three groups of three highly strained InGaAs/GaAs quantum wells in the...
[期刊论文] 作者:WANG Hai-Li,WU Dong-Hai,WU ning-peng,NI Hqiao-Qiao,HUANG She-Song,XIONG Yong-Hua,WANG Peng-Fei,HAN Qin, 来源:中国物理快报(英文版) 年份:2009
We report a 1.5-μm InGaAs/GaAs quantum well laser diode grown by molecular beam epitaxy on InGaAs metamorphic buffers. At 150K, for a 1500×10μm2 ridge wavegu...
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