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[期刊论文] 作者:Hui-Fang Xu,Xin-Feng Han,Wen Sun, 来源:中国物理B(英文版) 年份:2020
The tunnel field-effect transistor (TFET) is proposed by using the advantages of dopingless and line-tunneling tech-nology. The line tunneling is created due to...
[期刊论文] 作者:Hui-Fang Xu,Wen Sun,Na Wang, 来源:中国物理B(英文版) 年份:2021
The various advantages of extended-source (ES),broken gate (BG),and hetero-gate-dielectric (HGD) technology are blended together for the proposed tunnel field-e...
[期刊论文] 作者:Hui-Fang Xu,Jian Cui,Wen Sun,Xin-Feng Han, 来源:中国物理B(英文版) 年份:2019
A tunnel field-effect transistor (TFET) is proposed by combining various advantages together,such as non-uniform gate-oxide layer,hetero-gate-dielectric (HGD),a...
[期刊论文] 作者:LI Yin-chao,HE Yong-xia,SUN Man,CHEN Hui-fang,XU Ping-hua,WANG Sui-hua,LIU Hong-min, 来源:2013年(第三届)中国药物毒理学年会暨药物非临床安全性评价研究论坛 年份:2013
OBJECTIVE Giving the alcoholic extract from Rabdosia rubescens through ig administration for 30 d, observing whether it occurs accumulation toxicity of liver and kidney in rats, and providing a refere...
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