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Interface and border trapping effects in normally-off Al2O3/AlGaN/GaN MOS-HEMTs with different post-
[期刊论文] 作者：Si-Qi Jing,Xiao-Hua Ma,Jie-Jie Zhu,Xin-Chuang Zhang,Si-Yu Liu,Qing Zhu,Yue Hao,
来源：中国物理B（英文版） 年份：2020
Trapping effect in normally-off Al2O3/AlGaN/GaN metal–oxide–semiconductor (MOS) high-electron-mobility tran-sistors (MOS-HEMTs) with post-etch surface treatme...
[期刊论文] 作者：Qing Zhu,Xiao-Hua Ma,Wei-Wei Chen,Bin Hou,Jie-Jie Zhu,Meng Zhang,Li-Xiang Chen,
来源：中国物理B（英文版） 年份：2016
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[期刊论文] 作者：Si-Qin-Gao-Wa Bao,Xiao-Hua Ma,Wei-Wei Chen,Ling Yang,Bin Hou,Qing Zhu,Jie-Jie Zhu,Yue Hao,
来源：中国物理B（英文版） 年份：2019
In this paper, the interface states of the AlGaN/GaN metal–insulator–semiconductor (MIS) high electron mobility transistors (HEMTs) with an Al2O3 gate dielect...
[期刊论文] 作者：SiQin-GaoWa Bao,Jie-Jie Zhu,Xiao-Hua Ma,Bin Hou,Ling Yang,Li-Xiang Chen,Qing Zhu,Yue Hao,
来源：中国物理快报（英文版） 年份：2020
We investigate the effects of remote nitride-based plasma treatment on the channel carrier and device characteristics of AlGaN/GaN high electron mobility transi...
,Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-b
[期刊论文] 作者：Qing Zhu,Xiao-Hua Ma,Yi-Lin Chen,Bin Hou,Jie-Jie Zhu,Meng Zhang,Mei Wu,Ling Yang,Yue Hao,
来源：中国物理B（英文版） 年份：2020
We investigate the instability of threshold voltage in D-mode MIS-HEMT with in-situ SiN as gate dielectric under different negative gate stresses. The complex n...
Trap analysis of composite 2D-3D channel in AlGaN/GaN/graded-AlGaN∶Si/GaN∶C multi-heterostructure at
[期刊论文] 作者：Sheng Hu,Ling Yang,Min-Han Mi,Bin Hou,Sheng Liu,Meng Zhang,Mei Wu,Qing Zhu,Sheng Wu,Yang Lu,Jie-Jie Zhu,
来源：中国物理B（英文版） 年份：2020
The graded AlGaN∶Si back barrier can form the majority of three-dimensional electron gases (3DEGs) at the GaN/graded AlGaN∶Si heterostructure and create a com...
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