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[会议论文] 作者：Jin-Ping Ao,
来源：第一届全国宽禁带半导体学术及应用技术会议 年份：2015
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[期刊论文] 作者：Yuyu Bu,Jin-Ping Ao,
来源：绿色能源与环境：英文版 年份：2017
Photoelectrochemical(PEC) cathodic protection is considered as an environment friendly method for metals anticorrosion. In this technology, a n-type semiconduct...
,Evaluation of a gate-first process for AlGaN/GaN metal-oxide-semiconductor heterostructure field-ef
[期刊论文] 作者：Liuan Li,Jiaqi Zhang,Yang Liu,Jin-Ping Ao,
来源：中国物理B（英文版） 年份：2016
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Regulation of the photogenerated carrier transfer process during photoelectrochemical water splittin
[期刊论文] 作者：Yaping Zhang,Yuyu Bu,Lin Wang,Jin-Ping Ao,
来源：绿色能源与环境（英文版） 年份：2021
Photoelectrochemical (PEC) water splitting is considered as an ideal technology to produce hydrogen.Photogenerated carrier migration is one of the most importan...
,Plasma-assisted surface treatment for low-temperature annealed ohmic contact on AlGaN/GaN heterostr
[期刊论文] 作者：Lei Wang,Jiaqi Zhang,Liuan Li,Yutaro Maeda,Jin-Ping Ao,
来源：中国物理B（英文版） 年份：2017
In this study,a low-temperature annealed ohmic contact process was proposed on AlGaN/GaN heterostructure field effect transistors (HFETs) with the assistance of...
[期刊论文] 作者：Ting-Ting Wang,Xiao Wang,Xiao-Bo Li,Jin-Cheng Zhang,Jin-Ping Ao,
来源：中国物理快报（英文版） 年份：2019
The effect of temperature on the characteristics of gallium nitride (GaN) Schottky barrier diodes (SBDs) with TiN and Ni anodes is evaluated.With increasing the...
,Fabrication of CuOx thin-film photocathodes by magnetron reactive sputtering for photoelectrochemic
[期刊论文] 作者：Tian Xie,Tao Zheng,Ruiling Wang,Yuyu Bu,Jin-Ping Ao,
来源：绿色能源与环境（英文） 年份：2018
The CuOx thin film photocathodes were deposited on F-doped SnO2 (FTO) transparent conducting glasses by alteating current (AC)magnetron reactive sputtering unde...
[期刊论文] 作者：Jia-Qi Zhang,Lei Wang,Liu-An Li,Qing-Peng Wang,Ying Jiang,Hui-Chao Zhu,Jin-Ping Ao,
来源：中国物理B（英文版） 年份：2016
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,Synthesis of thermally stable HfOx Ny as gate dielectric for AlGaN/GaN heterostructure field-effect
[期刊论文] 作者：Tong Zhang,Taofei Pu,Tian Xie,Liuan Li,Yuyu Bu,Xiao Wang,Jin-Ping Ao,
来源：中国物理B（英文版） 年份：2018
In this paper, we adopted thermally stable HfOx Ny as gate dielectric for TiN/HfOx Ny/AlGaN/GaN heterostructure field-effect transistors (HFETs) application. It...
Band alignment between NiOx and nonpolar/semipolar GaN planes for selective-area-doped termination s
[期刊论文] 作者：Ji-Yao Du,Ji-Yu Zhou,Xiao-Bo Li,Tao-Fei Pu,Liu-An Li,Xin-Zhi Liu,Jin-Ping Ao,
来源：中国物理B（英文版） 年份：2021
Band alignment between NiOx and nonpolar GaN plane and between NiOx and semipolar GaN plane are measured by x-ray photoelectron spectroscopy.They demonstrate th...
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