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[期刊论文] 作者：Dan-Yang Chen,Jin-Shun Bi,Kai Xi,Gang Wang,
来源：中国物理B（英文版） 年份：2020
The influence of positive bias temperature instability(PBTI)on 1/f noise performance is systematically investigated on n-channel fin field-effect transistor(Fin...
[期刊论文] 作者：Jin-Shun Bi,Kai Xi,Bo Li,Hai-Bin Wang,Lan-Long Ji,Jin Li,Ming Liu,
来源：中国物理B（英文版） 年份：2018
Upset errors in 90-nm 64 Mb NOR-type floating-gate Flash memory induced by accelerated 129Xe and 209Bi ions are investigated in detail.The linear energy transfe...
,Total Ionization Dose Effects on Charge Storage Capability of Al2Oa/HfO2/Al2Oa-Based Charge Trappin
[期刊论文] 作者：Yan-Nan Xu,Jin-Shun Bi,Gao-Bo Xu,Bo Li,Kai Xi,Ming Liu,Hai-Bin Wang,Li Luo,
来源：中国物理快报（英文版） 年份：2018
Because of the discrete charge storage mechanism,charge trapping memory (CTM) technique is a good candidate for aerospace and military missions.The total ioniza...
[期刊论文] 作者：Mei Li,Jin-Shun Bi,Yan-Nan Xu,Bo Li,Kai Xi,Hai-Bin Wang,Jing-Liu,Jin-Li,Lan-Long Ji,Li Luo,Ming Liu,
来源：中国物理快报（英文版） 年份：2018
The 60 Co-γ ray total ionizing dose radiation responses of 55-nm silicon-oxide-nitride-oxide-silicon (SONOS) memory cells in pulse mode (programmed/erased with...
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