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[会议论文] 作者：Jiwen Zhang,
来源：第十四届全国肿瘤生物治疗大会 年份：2015
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[期刊论文] 作者：Guolin XU,Jiwen ZHANG,Huang LI,
来源：结构与土木工程前沿：英文版 年份：2018
深城市的挖掘上的实验数据能提供设计者在邻近的结构上估计深挖掘和他们的影响的潜在的变丑的一个重要参考基础。上海中心的构造由海洋的软泥土的厚存款在地点 underlain 用...
[会议论文] 作者：Jiwen Zhang,Chuan Li,Libing Chen,
来源：首届亚洲药物制剂科学研讨会(1st Asian Pharmaceutical Science and Technolog 年份：2007
Purpose: To quantify the bias in the Wagner-Nelson (W-N) estimate of the fraction of drug absorbed resulting from the absolute bioavailability (F) and dissolution/release kinetics of the drug.Methods:...
[会议论文] 作者：Ya Wang,Fangliang Cao,Jiwen Zhang,
来源：第十三届全国植物基因组学大会 年份：2012
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[会议论文] 作者：Xiaoli Lu,Jiwen Zhang,Jincheng Zhang,Yue Hao,
来源：第十五届全国电介质、材料与应用学术会议 年份：2014
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[期刊论文] 作者：Guolin XU,Jiwen ZHANG,Huang LIU,Changqin RENC,
来源：结构与土木工程前沿 年份：2018
Empirical data on deep urban excavations can provide designers a significant reference basis for assessing potential deformations of the deep excavations and th...
[会议论文] 作者：Xiaoli Lu,Jiwen Zhang,Jincheng Zhang,Yue Hao,
来源：第十五届全国电介质、材料与应用学术会议 年份：2014
As choice for voltage-driven magnetic recording devices,magnetoelectric(ME)materials hold the promise to build next-generation memory with high storage capacity...
[会议论文] 作者：Jiwen Zhang,Xianzhen Yin,Peter York,Tiqiao Xiao,
来源：2015年中国药物制剂大会、中国药学会药剂专业委员会2015年学术年会暨国际控释协会中国分会2015年学术年会 年份：2015
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[期刊论文] 作者：韦长成,王华,XU Jiwen,ZHANG Yupei,CHEN Qisong,,
来源：Journal of Wuhan University of Technology(Materials Science) 年份：2017
Mg_(0.2)Zn_(0.8)O(MZO)/La_(0.67)Ca_(0.33)MnO(LCMO) heterostructure was deposited on p~+-Si substrates by sol-gel spin coating technique. The Ag/MZO/LCMO/p~+-Si...
Effects of Electrode on Resistance Switching Properties of ZnMn_2O_4 Films Deposited by Magnetron Sp
[期刊论文] 作者：王华,LI Zhida,XU Jiwen,ZHANG Yupei,YANG Ling,,
来源：Journal of Wuhan University of Technology(Materials Science) 年份：2016
ZnMn_2O_4 films for resistance random access memory(RRAM) were fabricated with different device structures by magnetron sputtering. The effects of electrode on...
Effects of Electrode on Resistance Switching Properties of ZnMn2O4 Films Deposited by Magnetron Sput
[期刊论文] 作者：WANG Hua,LI Zhida,XU Jiwen,ZHANG Yupei,YANG Ling,
来源：武汉理工大学学报（材料科学版）（英文版） 年份：2016
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Remarkable Improvement of Ferroelectric Properties and Leakage Current in BiFeO3 Thin Films by Nd Mo
[期刊论文] 作者：HAN Dong,WANG Hua,XU Jiwen,ZHANG Xiaowen,YANG Ling,
来源：武汉理工大学学报（材料科学版）（英文版） 年份：2018
Ferroelectric and leakage properties are important for ferroelectric applications. Pure and Nd-doped (x=0.05-0.20) BiFeO3 thin films were fabricated by sol-gel method on FTO substrates. The phase structure, surface morphology, leakage curre......
Fabrication and Properties of Ag/Mg0.2Zn0.80/La0.67Ca0.33MnO/p+-Si Resistive Switching Heterostructu
[期刊论文] 作者：WEI Changcheng,WANG Hua,XU Jiwen,ZHANG Yupei,CHEN Qisong,
来源：武汉理工大学学报（材料科学版）（英文版） 年份：2017
Mg0.2Zn0.8O (MZO)/La0.67Ca0.33MnO (LCMO) heterostructure was deposited on p+-Si substrates by sol-gel spin coating technique.The Ag/MZO/LCMO/p+-Si devices exhibit a bipolar,reversible,and remarkable current-voltage characteristic at room te......
Resistance Switching Properties of Ag/Zn Mn_2O_4/p-Si Fabricated by Magnetron Sputtering for Resista
[期刊论文] 作者：王华,LI Zhida,XU Jiwen,ZHANG Yupei,YANG Ling,QIU Wei,,
来源：Journal of Wuhan University of Technology(Materials Science 年份：2015
A resistance random access memory(RRAM) with a structure of Ag/ZnMn_2O_4/p-Si was fabricated by magnetron sputtering method. Reliable and repeated switching of...
Resistive Switching Behavior of Ag/Mg_(0.2)Zn_(0.8)O/ZnMn_2O_4/p~+-Si Heterostructure Devices for No
[期刊论文] 作者：韦长成,王华,XU Jiwen,ZHANG Yupei,ZHANG Xiaowen,YANG Ling,,
来源：Journal of Wuhan University of Technology(Materials Science) 年份：2017
The Ag/Mg_(0.2)Zn_(0.8)O/ZnMn_2O_4/p~+-Si heterostructure devices were fabricated by sol-gel spin coating technique and the resistive switching behavior,conduct...
Enhanced dissolution and stability of lansoprazole by cyclodextrin inclusion complexation:Preparatio
[会议论文] 作者：Yi Lu,Xiongwei Hu,Tao Guo,Jianping Qi,Jiwen Zhang,Wei Wu,
来源：2012年中国药物制剂大会——中国药学会药剂专业委员会年会、亚洲阿登制药技术研讨会暨国际控释协会中国分会年会 年份：2012
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[会议论文] 作者：Li Wu,Xianzhen Yin,Jingkai Gu,Tiqiao Xiao,Peter York,Jiwen Zhang,
来源：2016年中国药物制剂大会、中国药学会药剂专业委员会2016年学术年会、中国化学制药工业协会固体制剂专业委员会2016年 年份：2016
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Resistance Switching Properties of Ag/ZnMn2O4/p-Si Fabricated by Magnetron Sputtering for Resistance
[期刊论文] 作者：WANG Hua,LI Zhida,XU Jiwen,ZHANG Yupei,YANG Ling,QIU Wei,
来源：武汉理工大学学报（材料科学版）（英文版） 年份：2015
A resistance random access memory (RRAM) with a structure of Ag/ZnMn2O4/p-Si was fabricated by magnetron sputtering method. Reliable and repeated switching of the resistance of ZnMn2O4 iflms was obtained between two well-deifned states of h......
Resistive Switching Behavior of Ag/Mg0.2Zn0.8O/ZnMn2O4/p+-Si Heterostructure Devices for Nonvolatile
[期刊论文] 作者：WEI Changcheng,WANG Hua,XU Jiwen,ZHANG Yupei,ZHANG Xiaowen,YANG Ling,
来源：武汉理工大学学报（材料科学版）（英文版） 年份：2017
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,Sodium dodecyl sulfate/β-cyclodextrin vesicles embedded in chitosan gel for insulin delivery with p
[期刊论文] 作者：Zhuo Li,Haiyan Li,Caifen Wang,Jianghui Xu,Vikramjeet Singh,Dawei Chen,Jiwen Zhang,,
来源：Acta Pharmaceutica Sinica B 年份：2016
In an answer to the challenge of enzymatic instability and low oral bioavailability of proteins/peptides, a new type of drug-delivery vesicle has been developed...
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