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IMPROVEMENT IN PARAMETRIC AND RELIABILITY PERFORMANCE OF 90NM DUAL -DAMASCENE INTERCONNECTS USING AR
[期刊论文] 作者：N.Kumar,S.Chu,D.L.Diehl,K.Maekawa,K.Mori,K.Kobayashi,M.Yoneda,,
来源：集成电路应用 年份：2005
As interconnects shrink beyond 90nm node, the presence of etch residues can createhigh via resistance and void nucleation during stress migration (SM) testing....
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