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,Enhancement-Mode InAlAs/InGaAs/InP High Electron Mobility Transistor with rnStrained InAlAs Barrier
[期刊论文] 作者：AO Jin-Ping,LIU Shi-Yong,ZENG Qing-Ming,ZHAO Yong-Lin,LI Xian-Jie,LIU Wei-Ji,LIANG Chun-Guang,
来源：中国物理快报(英文版) 年份：2000
The relatively low Schottky barrier height on In0.52Al0.48As lattice-matched to InP has hampered the achievement of enhancement-mode InA1As/InGaAs/InP high elec...
[期刊论文] 作者：WANG Xin-Qiang,ZHANG Ye-Jin,DU Guo-Tong,LI Xian-Jie,YIN Jing-Zhi,CHEN Wei-You,YANG Shu-Ren,
来源：中国物理快报（英文版） 年份：2001
Room temperature photoluminescence (PL) spectra of InAs self-assembled quantum dots (QDs) deposited on aGaAs/InP and InP substrate are investigated. From the PL...
,Self-Aligned InP/InGaAs Single Heterojunction Bipolar Transistor with Novel Micro-airbridge Structu
[期刊论文] 作者：LI Xian-Jie(李献杰),CAI Dao-Min(蔡道民),ZENG Qing-Ming(曾庆明),LIU Shi-Yong(刘式墉),LIANG Chun-Guang(梁春广),
来源：中国物理快报（英文版） 年份：2003
The fabrication and performance of a self-aligned InP/InGaAs single heterojunction bipolar transistor (SHBT)with a novel micro-airbridge structure and co-planar...
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