搜索筛选:
搜索耗时0.0972秒,为你在为你在102,285,761篇论文里面共找到 7 篇相符的论文内容
发布年度:
[期刊论文] 作者：Li-Hua Dai Bo Xu Guang-Hui Zhu,
来源：世界胃肠病学杂志：英文版（电子版） 年份：2006
瞄准：在一次尝试设计一条帮助手的 laparoscopic 途径为腹的大内脏的 laparoscopic 切除术提供一种选择。方法：A 5-6 厘米切口(为 HandPort ) 并且 2 根套管针被采用。目标机关...
[期刊论文] 作者：Xiao-Nian Liu,Li-Hua Dai,Bing-Xu Ning,Shi-Chang Zou,
来源：中国物理快报（英文版） 年份：2017
The body current lowering effect of 130nm partially depleted silicon-on-insulator (PDSOI) input/output (I/O) n-type metal-oxide-semiconductor field-effect trans...
,Enhanced radiation-induced narrow channel effects in 0.13-μm PDSOI nMOSFETs with shallow trench iso
[期刊论文] 作者：Meng-Ying Zhang,Zhi-Yuan Hu,Da-Wei Bi,Li-Hua Dai,Zheng-Xuan Zhang,
来源：中国物理B（英文版） 年份：2018
Total ionizing dose responses of different transistor geometries after being irradiated by 60Co γ-rays,in 0.13-μm partially-depleted silicon-on-insulator (PD...
,Total Ionizing Dose Response of Different Length Devices in 0.13 μm Partially Depleted Silicon-on-I
[期刊论文] 作者：Meng-Ying Zhang,Zhi-Yuan Hu,Zheng-Xuan Zhang,Shuang Fan,Li-Hua Dai,Xiao-Nian Liu,Lei Song,
来源：中国物理快报（英文版） 年份：2017
An anomalous total dose effect that the long length device is more susceptible to total ionizing dose than the short one is observed with the 0.13 μm partially...
[期刊论文] 作者：Li-Hua Dai,Da-Wei Bi,Zhi-Yuan Hu,Xiao-Nian Liu,Meng-Ying Zhang,Zheng-Xuan Zhang,Shi-Chang Zou,
来源：中国物理B（英文版） 年份：2018
Silicon-on-insulator (SOI) devices are sensitive to the total ionizing dose effect due to the existence of buried oxide. In this paper, an extra single-step Si...
[期刊论文] 作者：Li-Hua Dai,Da-Wei Bi,Zheng-Xuan Zhang,Xin Xie,Zhi-Yuan Hu,Hui-Xiang Huang,Shi-Chang Zou,
来源：中国物理快报（英文版） 年份：2018
We perform the total ionizing radiation and electrical stress experiments to investigate the electrical characteristics of the modified silicon-on-insulator (SO...
,Influence of Tilted Angle on Effective Linear Energy Transfer in Single Event Effect Tests for Inte
[期刊论文] 作者：Le-Qing Zhang,Jian Lu,Jia-Ling Xu,Xiao-Nian Liu,Li-Hua Dai,Yi-Ran Xu,Da-Wei Bi,Zheng-Xuan Zhang,
来源：中国物理快报（英文版） 年份：2017
A heavy-ion irradiation experiment is studied in digital storage cells with different design approaches in 130hm CMOS bulk Si and silicon-on-insulator (SO1) tec...
相关搜索：
