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搜索耗时0.0778秒,为你在为你在102,285,761篇论文里面共找到 6 篇相符的论文内容
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[期刊论文] 作者：DING Li-Zhen,CHEN Hong,HE Miao,JIANG Yang,LU Tai-Ping,DENG Zhen,CHEN Fang-Sheng,
来源：中国物理快报（英文版） 年份：2014
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,The Influence of Graded AlGaN Buffer Thickness for Crack-Free GaN on Si(111)Substrates by using MOC
[期刊论文] 作者：XU Pei-Qiang,JIANG Yang,MA Zi-Guang,DENG Zhen,LU Tai-Ping,DU Chun-Hua,FANG Yu-Tao,
来源：中国物理快报（英文版） 年份：2013
Owing to their superior intrinsic properties,GaNbased materials are very promising semiconductor materials for applications in optoelectronic devices,as well as...
,Efficiency enhancement of InGaN based blue light emitting diodes with InGaN/GaN multilayer barriers
[期刊论文] 作者：Tong Jin-Hui,Li Shu-Ti,Lu Tai-Ping,Liu Chao,Wang Hai-Long,Wu Le-Juan,Zhao Bi-Jun,Wang Xing-Fu,Chen Xin,
来源：中国物理B（英文版） 年份：2012
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[期刊论文] 作者：Lu Tai-Ping,LiShu-Ti,Zhang Kang,Liu Chao,Xiao Guo-Wei,Zhou Yu-Gang,ZhengShu-Wen,Yin Yi-An,Wu Le-Juan,,
来源：中国物理B（英文版） 年份：2011
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,Simulation study of blue InGaN multiple quantum well light-emitting diodes with different hole inje
[期刊论文] 作者：Wu Le-Juan,Li Shu-Ti,Liu Chao,Wang Hai-Long,Lu Tai-Ping,Zhang Kang,Xiao Guo-Wei,Zhou Yu-Gang,Zheng Shu-Wen,
来源：中国物理B（英文版） 年份：2012
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,The advantage of blue InGaN multiple quantum wells light-emitting diodes with p-AlInN electron bloc
[期刊论文] 作者：Lu Tai-Ping,Li Shu-Ti,Zhang Kang,Liu Chao,Xiao Guo-Wei,Zhou Yu-Gang,Zheng Shu-Wen,Yin Yi-An,Wu Le-Juan,
来源：中国物理B（英文版） 年份：2011
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