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Foreword to the special issue on wide-bandgap (WBG) semiconductors:from fundamentals to applications
[期刊论文] 作者:Zongwei Xu,Yidan Tang,Mathias Rommel,
来源:纳米技术与精密工程(英文) 年份:2020
The development of new kinds of semiconductor material is a very attractive topic of scientific research and appliations. Graphene is con-sidered as one of the...
[期刊论文] 作者:Ying Song,Zongwei Xu,Andreas Rosenkranz,Mathias Rommel,Changkun Shi,Fengzhou Fang,
来源:纳米技术与精密工程 年份:2019
Annealing nanodiamonds (ND) at high temperatures up to 1700 °C is a common method to synthesize carbon onions. The transformation from NDs to carbon onions is...
Density functional theory calculation of the properties of carbon vacancy defects in silicon carbide
[期刊论文] 作者:Xiuhong Wang,Junlei Zhao,Zongwei Xu,Flyura Djurabekova,Mathias Rommel,Ying Song,Fengzhou Fang,
来源:纳米技术与精密工程(英文) 年份:2020
As a promising material for quantum technology, silicon carbide (SiC) has attracted great interest in materials sci-ence. Carbon vacancy is a dominant defect in...
Electron paramagnetic resonance characterization of aluminum ion implantation-induced defects in 4H-
[期刊论文] 作者:Xiuhong Wang,Zongwei Xu,Mathias Rommel,Bing Dong,Le Song,Clarence Augustine TH Tee,Fengzhou Fang,
来源:纳米技术与精密工程(英文) 年份:2019
Deep-level defects in silicon carbide (SiC) are critical to the control of the performance of SiC electron devices. In this paper, deep-level defects in aluminu...
Confocal photoluminescence characterization of silicon-vacancy color centers in 4H-SiC fabricated by
[期刊论文] 作者:Jiayu Liu,Zongwei Xu,Ying Song,Hong Wang,Bing Dong,Shaobei Li,Jia Ren,Qiang Li,Mathias Rommel,Xinhua,
来源:纳米技术与精密工程(英文) 年份:2020
Silicon-vacancy (VSi) centers in silicon carbide (SiC) are expected to serve as solid qubits, which can be used in quantum computing and sensing. As a new contr...
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