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[期刊论文] 作者：Mingchen Hou,Gang Xie,Kuang Sheng,
来源：中国物理B（英文版） 年份：2019
The physical mechanisms of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures by laser annealing and rapid thermal annealing are systematically investigat...
[期刊论文] 作者：Mingchen Hou,Gang Xie,Qing Guo,Kuang Sheng,
来源：中国物理B（英文版） 年份：2021
A1GaN/GaN high-electron-mobility transistors with Au-free ohmic contacts are fabricated by selective laser annealing and conventional rapid thermal annealing.The current transport mechanism of ohmic contacts is investigated.High-temperature......
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