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[期刊论文] 作者：WANG Duo-Fa,LIAO Lei,LI Jin-Chai,FU Qiang,PENG Ming-Zeng,ZHOU Jun-Ming,
来源：中国物理快报（英文版） 年份：2005
ZnO nanostructures with different morphologies were fabricated by changing the partial oxygen pressure. The structures, morphologies and optical properties of Z...
[期刊论文] 作者：ZHU Xue-Liang,GUO Li-Wei,YU Nai-Sen,PENG Ming-Zeng,YAN Jian-Feng,GE Bing-Hui,JIA Hai-Qiang,CHEN Hong,,
来源：中国物理快报（英文版） 年份：2006
InN and In0.46 Ga0.54N films are grown on sapphire with a GaN buffer by metalorganic chemical vapour deposition (MOCVD). Both high resolution x-ray diffraction...
[期刊论文] 作者：ZHANG Jie,GUO Li-Wei,CHEN Yao,XU Pei-Qiang,DING Guo-Jian,PENG Ming-Zeng,JIA Hai-Qiang,ZHOU Jun-Ming,CHEN,
来源：中国物理快报（英文版） 年份：2009
AlxGa1-xN epilayers with a wide AI composition range (0.2≤x≤0.68) were grown on AIN/sapphire templates by low-pressure metalorganic chemical vapour deposition...
,Growth of Highly Conductive n-Type Al0.7Ga0.3N Film by Using AIN Buffer with Periodical Variation o
[期刊论文] 作者：ZHANG Jie,GUO Li-Wei,XING Zhi-Gang,GE Bing-Hui,DING Guo-Jian,PENG Ming-Zeng,JIA Hai-Qiang,ZHOU Jun-Ming,
来源：中国物理快报（英文版） 年份：2008
High quality and highly conductive n-type Alo.7Ga0.3N films are obtained by using A1N multi-step layers (MSL) with periodical variation of Ⅴ/Ⅲ ratios by low-p...
[期刊论文] 作者：ZHOU Zhong-Tang,QUO Li-Wei,XING Zhi-Gang,DING Guo-Jian,ZHANG Jie,PENG Ming-Zeng,JIA Hai-Qiang,CHEN Hong,
来源：中国物理快报（英文版） 年份：2007
Semi-insulating GaN is grown by using a two-step A1N buffer layer by metalorganic chemical vapour deposition. The sheet resistance of as-grown semi-insulating G...
,Luminescent Characteristics of Near Ultraviolet InGaN/GaN MQWs Grown on Grooved Sapphire Substrates
[期刊论文] 作者：YU Nai-Sen,GUO Li-Wei,CHEN Hong,XING Zhi-Gang,WANG Jing,ZHU Xue-Liang,PENG Ming-Zeng,YAN Jian-Feng,JIA,
来源：中国物理快报（英文版） 年份：2006
InGaN/GaN multiple quantum wells (MQWs) are grown on planar and maskless periodically grooved sapphires by metal organic vapour phase epitaxy (MOCVD). High-reso...
[期刊论文] 作者：PENG Ming-Zeng,GUO Li-Wei,ZHANG Jie,YU Nai-Sen,ZHU Xue-Liang,YAN Jian-Feng,GE Bin-Hui,JIA Hai-Qiang,CHEN,
来源：中国物理快报（英文版） 年份：2008
A three-step growth process is developed for depositing high-quality aluminium-nitride (AIN) epilayers on (001) sapphire by low pressure metalorganic chemical v...
[期刊论文] 作者：YAN Jian-Feng,XING Zhi-Gang,WANG Jing,GUO Li-Wei,ZHU Xue-Liang,PENG Ming-Zeng,YU Nai-Sen,JIA Hai-Qiang,
来源：中国物理快报（英文版） 年份：2007
Canti-bridged epitaxial lateral overgrowth (CBELO) of GaN is performed by metalorganic chemical vapour deposition (MOCVD) on maskless V-grooved sapphire substra...
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