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[期刊论文] 作者：Punyasloka Bal,Bahniman Ghosh,Partha Mondal,M.W.Akram,,
来源：Journal of Semiconductors 年份：2014
This paper proposes a laterally graded junctionless transistor taking peak doping concentration near the source and drain region, and a gradual decrease in dopi...
[期刊论文] 作者：M.W.Akram,Bahniman Ghosh,Punyasloka Bal,Partha Mondal,,
来源：Journal of Semiconductors 年份：2014
We have investigated the 20 nm p-type double gate junctionless tunnel field effect transistor(PDGJLTFET) and the impact of variation of different device paramet...
Hetero-gate-dielectric double gate junctionless transistor (HGJLT) with reduced band-to-band tunnell
[期刊论文] 作者：Bahniman Ghosh,ParthaMondal,M.W.Akram,Punyasloka Bal,Akshay Kumar Salimath,
来源：城市道桥与防洪 年份：2014
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生、测量监控等方面人手,介绍了S226海滨大桥...
Hetero-gate-dielectric double gate junctionless transistor(HGJLT)with reduced band-to-band tunnellin
[期刊论文] 作者：Bahniman Ghosh,Partha Mondal,M.W.Akram,Punyasloka Bal,Akshay Kumar Salimath,,
来源：Journal of Semiconductors 年份：2014
We propose a hetero-gate-dielectric double gate junctionless transistor(HGJLT), taking high-k gate insulator at source side and low-k gate insulator at drain si...
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