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,Effect of overdrive voltage on PBTI trapping behavior in GaN MIS-HEMT with LPCVD SiNxgate dielectri
[期刊论文] 作者：Tao-Tao Que,Ya-Wen Zhao,Liu-An Li,Liang He,Qiu-Ling Qiu,Zhen-Xing Liu,Jin-Wei Zhang,Jia Chen,Zhi-Sheng,
来源：中国物理B（英文版） 年份：2020
The effect of high overdrive voltage on the positive bias temperature instability (PBTI) trapping behavior is inves-tigated for GaN metal-insulator-semiconducto...
,Experimental evaluation of interface states during time-dependent dielectric breakdown of GaN-based
[期刊论文] 作者：Ya-Wen Zhao,Liu-An Li,Tao-Tao Que,Qiu-Ling Qiu,Liang He,Zhen-Xing Liu,Jin-Wei Zhang,Qian-Shu Wu,Jia Chen,
来源：中国物理B（英文版） 年份：2020
We experimentally evaluated the interface state density of GaN MIS-HEMTs during time-dependent dielectric break-down (TDDB). Under a high forward gate bias stre...
Evaluation of stress voltage on off-state time-dependent breakdown for GaN MIS-HEMT with SiNx gate d
[期刊论文] 作者：Tao-Tao Que,Ya-Wen Zhao,Qiu-Ling Qiu,Liu-An Li,Liang He,Jin-Wei Zhang,Chen-Liang Feng,Zhen-Xing Liu,Qian-Shu,
来源：中国物理B（英文版） 年份：2020
Stress voltages on time-dependent breakdown characteristics of GaN MIS-HEMTs during negative gate bias stress (with VGS < 0, VD = VS = 0) and off-state stress (...
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