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[期刊论文] 作者:J.Pradhan,S.R.Pattanaik,S.K.Swain,G.N.Dash,, 来源:Journal of Semiconductors 年份:2014
We have presented a comparative account of the high frequency prospective as well as noise behaviors of wide-bandgap 4H-SiC and 6H-SiC based on different struct...
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