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Determination of failure degree of 1.2 kV SiC MOSFETs after short-circuit test using an improved tes
[期刊论文] 作者：Shen Diao,Jun Sun,Ziwei Zhou,Z,
来源：纳米技术与精密工程(英文) 年份：2020
Analysis of the short-circuit characteristics of SiC metal-oxide-semiconductor field-effect transistors(MOSFETs)is very important for their practical applicatio...
Determination of failure degree of 1.2 kV SiC MOSFETs after short-circuit test using an improved tes
[期刊论文] 作者：Shen Diao,Jun Sun,Ziwei Zhou,Zhenzhong Zhang,Adolf Sch?ner,Zedong Zheng,Weiwei He,
来源：纳米技术与精密工程（英文） 年份：2020
Analysis of the short-circuit characteristics of SiC metal-oxide-semiconductorfield-effect transistors (MOSFETs) is very important for their practical applicati...
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