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Influence of growth conditions of oxide on electrical properties of AlGaN/GaN metal–insulator–semico
[期刊论文] 作者：Shuxin Tan,Takashi Egawa,
来源：半导体学报:英文版 年份：2019
AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) on a silicon substrate were fabricated with silicon oxide as a gate die...
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