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[期刊论文] 作者:HAN Ji-sheng,Sima Dimitrijev,F, 来源:材料科学与工程:中英文版 年份:2009
[期刊论文] 作者:申占伟, 张峰, Sima Dimitrijev, 韩吉胜, 闫, 来源:null 年份:2017
[期刊论文] 作者:Song Qing-Wen,Zhang Yu-Ming,Han Ji-Sheng,Philip Tanner,sima Dimitrijev,Zhang Yi-Men,Tang Xiao-Yan, 来源:中国物理B(英文版) 年份:2013
[期刊论文] 作者:宋庆文,张玉明,韩吉胜,Philip Tanner,Sima Dimitrijev,张义门,汤晓燕,郭辉,, 来源:Chinese Physics B 年份:2013
The fabrication of 4H-SiC vertical trench-gate metal-oxide-semiconductor field-effect transistors(UMOSFETs) is reported in this paper.The device has a 15-μm th...
[期刊论文] 作者:Zhan-Wei Shen,Feng Zhang,Sima Dimitrijev,Ji-Sheng Han,Guo-Guo Yan,Zheng-Xin Wen,Wan-Shun Zhao,Lei Wang, 来源:中国物理B(英文版) 年份:2017
The interface properties and electrical characteristics of the n-type 4H-SiC planar and trench metal-oxidesemiconductor (MOS) capacitors are investigated by mea...
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