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Design and investigation of dopingless double-gate line tunneling transistor: Analog performance, li
[期刊论文] 作者：Hui-Fang Xu,Xin-Feng Han,Wen Sun,
来源：中国物理B（英文版） 年份：2020
The tunnel field-effect transistor (TFET) is proposed by using the advantages of dopingless and line-tunneling tech-nology. The line tunneling is created due to...
,Analysis of non-uniform hetero-gate-dielectric dual-material control gate TFET for suppressing ambi
[期刊论文] 作者：Hui-Fang Xu,Jian Cui,Wen Sun,Xin-Feng Han,
来源：中国物理B（英文版） 年份：2019
A tunnel field-effect transistor (TFET) is proposed by combining various advantages together,such as non-uniform gate-oxide layer,hetero-gate-dielectric (HGD),a...
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