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Progress in studies on the role of gamma-aminobutyric acid type A receptor in convulsion: a short re
[期刊论文] 作者：LI Xing-fang,LIU Li-qun,
来源：中华医学杂志（英文版） 年份：2004
Convulsion is the medical condition where body muscles contract and relax rapidly and repeatedly,resulting in an uncontrolled shaking of the body.The impaired i...
Progress in studies on the role of gamma-aminobutyric acid type A receptor in convulsion: a short re
[期刊论文] 作者：LI Xing-fang,LIU Li-qun,
来源：中华医学杂志（英文版） 年份：2012
Convulsion is the medical condition where body muscles contract and relax rapidly and repeatedly,resulting in an uncontrolled shaking of the body.The impaired i...
Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular apert
[期刊论文] 作者：TANG Bin,JIANG Xing-fang,LIU Z,
来源：光电子快报：英文版 年份：2008
By using the expansion of the aperture function into a finte sum of complex Gaussian functions, the corresponding analytical expressions of Hermite-cosh-Gaussia...
Propagation of hermite-cosh-gaussian beams passing through ABCD optical system with an annular apert
[期刊论文] 作者：TANG Bin,JIANG Xing-fang,LIU Zhi-min,
来源：城市道桥与防洪 年份：2008
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生、测量监控等方面人手,介绍了S226海滨大桥...
,Influences of annealing on structural and compositional properties of Al2O3 thin films grown on 4H-
[期刊论文] 作者：Li-Xin Tian,Feng Zhang,Zhan-Wei Shen,Guo-Guo Yan,Xing-Fang Liu,Wan-Shun Zhao,Lei Wang,
来源：中国物理B（英文版） 年份：2016
...
,Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space
[期刊论文] 作者：Zheng-Xin Wen,Feng Zhang,Zhan-Wei Shen,Jun Chen,Ya-Wei He,Guo-Guo Yan,Xing-Fang Liu,Wan-Shun Zhao,Lei,
来源：中国物理B（英文版） 年份：2019
10-kV 4H–SiC p-channel insulated gate bipolar transistors (IGBTs) are designed, fabricated, and characterized in this paper. The IGBTs have an active area of 2...
[期刊论文] 作者：Shen,Feng Zhang,Sima Dimitrijev,Ji-Sheng Han,Guo-Guo Yan,Zheng-Xin Wen,Wan-Shun Zhao,Lei Wang,Xing-Fang Liu,
来源：中国物理B（英文版） 年份：2017
The interface properties and electrical characteristics of the n-type 4H-SiC planar and trench metal-oxidesemiconductor (MOS) capacitors are investigated by mea...
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