搜索筛选:
搜索耗时0.0987秒,为你在为你在102,285,761篇论文里面共找到 6 篇相符的论文内容
发布年度:
[期刊论文] 作者：WANG Yong,YU Nai-Sen,LI Ming,LAU Kei -May,
来源：中国物理快报（英文版） 年份：2011
AlGaN/GaN high electron mobility transistors(HEMTs) are grown on 2-inch Si(111) substrates by MOCVD.The stacked AlGaN/AlN interlayer with different AlGaN thickn...
Syntheses, Structures, Electrochemistry and Magnetic Properties of Two Trinuclear Cyanide-bridged Cl
[期刊论文] 作者：WANG An-Ping,DONG Da-Peng,ZHAO Hai-Yan,YU Nai-Sen,LI Zheng-Hua,
来源：黑龙江科技信息 年份：2019
本文通过对荣华二采区10...
[期刊论文] 作者：ZHU Xue-Liang,GUO Li-Wei,YU Nai-Sen,PENG Ming-Zeng,YAN Jian-Feng,GE Bing-Hui,JIA Hai-Qiang,CHEN Hong,,
来源：中国物理快报（英文版） 年份：2006
InN and In0.46 Ga0.54N films are grown on sapphire with a GaN buffer by metalorganic chemical vapour deposition (MOCVD). Both high resolution x-ray diffraction...
,Luminescent Characteristics of Near Ultraviolet InGaN/GaN MQWs Grown on Grooved Sapphire Substrates
[期刊论文] 作者：YU Nai-Sen,GUO Li-Wei,CHEN Hong,XING Zhi-Gang,WANG Jing,ZHU Xue-Liang,PENG Ming-Zeng,YAN Jian-Feng,JIA,
来源：中国物理快报（英文版） 年份：2006
InGaN/GaN multiple quantum wells (MQWs) are grown on planar and maskless periodically grooved sapphires by metal organic vapour phase epitaxy (MOCVD). High-reso...
[期刊论文] 作者：PENG Ming-Zeng,GUO Li-Wei,ZHANG Jie,YU Nai-Sen,ZHU Xue-Liang,YAN Jian-Feng,GE Bin-Hui,JIA Hai-Qiang,CHEN,
来源：中国物理快报（英文版） 年份：2008
A three-step growth process is developed for depositing high-quality aluminium-nitride (AIN) epilayers on (001) sapphire by low pressure metalorganic chemical v...
[期刊论文] 作者：YAN Jian-Feng,XING Zhi-Gang,WANG Jing,GUO Li-Wei,ZHU Xue-Liang,PENG Ming-Zeng,YU Nai-Sen,JIA Hai-Qiang,
来源：中国物理快报（英文版） 年份：2007
Canti-bridged epitaxial lateral overgrowth (CBELO) of GaN is performed by metalorganic chemical vapour deposition (MOCVD) on maskless V-grooved sapphire substra...
相关搜索：
