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,Degradation of current-voltage and low frequency noise characteristics under negative bias illumina
[期刊论文] 作者：Li Wang,Yuan Liu,Kui-Wei Geng,Ya-Yi Chen,Yun-Fei En,
来源：中国物理B（英文版） 年份：2018
The instabilities of indium-zinc oxide thin film transistors under bias and/or illumination stress are studied in this paper.Firstly,illumination experiments ar...
,Negative gate bias stress effects on conduction and low frequency noise characteristics in p-type p
[期刊论文] 作者：Chao-Yang Han,Yuan Liu,Yu-Rong Liu,Ya-Yi Chen,Li Wang,Rong-Sheng Chen,
来源：中国物理B（英文版） 年份：2019
The instability of p-channel low-temperature polycrystalline silicon thin film transistors (poly-Si TFTs) is investigated under negative gate bias stress (NBS)...
,Low-Frequency Noise in Amorphous Indium Zinc Oxide Thin Film Transistors with Aluminum Oxide Gate I
[期刊论文] 作者：Ya-Yi Chen,Yuan Liu,Zhao-Hui Wu,Li Wang,Bin Li,Yun-Fei En,Yi-Qiang Chen,
来源：中国物理快报（英文版） 年份：2018
Low-frequency noise (LFN) in all operation regions of amorphous indium zinc oxide (a-IZO) thin film transistors (TFTs) with an aluminum oxide gate insulator is...
,Temperature Dependence of Electrical Characteristics in Indium-Zinc-Oxide Thin Film Transistors fro
[期刊论文] 作者：Yuan Liu,Li Wang,Shu-Ting Cai,Ya-Yi Chen,Rongsheng Chen,Xiao-Ming Xiong,Kui-Wei Geng,
来源：中国物理快报（英文版） 年份：2018
The transfer characteristics of amorphous indium-zinc-oxide thin film transistors are measured in the temperature range of 10-400K.The variation of electrical p...
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