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,Resistive switching characteristic and uniformity of low-power HfOx-based resistive random access m
[期刊论文] 作者：Shuai Su,Xiao-Chuan Jian,Fang Wang,Ye-Mei Han,Yu-Xian Tian,Xiao-Yang Wang,Hong-Zhi Zhang,
来源：中国物理B（英文版） 年份：2016
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[期刊论文] 作者：Shi-Jian Wu,Fang Wang,Zhi-Chao Zhang,Yi Li,Ye-Mei Han,Zheng-Chun Yang,Jin-Shi Zhao,Kai-Liang Zhang,
来源：中国物理B（英文版） 年份：2018
The impacts of HfOx inserting layer thickness on the electrical properties of the ZnO-based transparent resistance random access memory (TRRAM) device were inve...
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