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[期刊论文] 作者：QIAN Cong,ZHANG En-Xia,ZHANG Z,
来源：核技术：英文版 年份：2005
In this work, top and back gate characteristics of partially-depleted NMOS transistors with enclosed gate fabricated on SIMOX which is hardened by silicon ions...
,Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-in
[期刊论文] 作者：Tang Hai-Ma,Zheng Zhong-Shan,Zhang En-Xia,Yu Fang,Li Ning,Wang Ning-Juan,
来源：中国物理B（英文版） 年份：2010
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[期刊论文] 作者：ZHANG En-Xia,YI Wan-Bing,LIU Xiang-Hua,CHEN Meng,LIU Zhong-Li,Wang Xi,
来源：中国物理快报（英文版） 年份：2004
Silicon-on-insulating multi-layer (SOIM) materials were fabricated by co-implantation of oxygen and nitrogen ions with different energies and doses. The multila...
[期刊论文] 作者：CHEN Ming,LUO Hong-Wei,ZHANG Zheng-Xuan,ZHANG En-Xia,YANG Hui,TIAN Hao,WANG Ru,YU Wen-Jie,
来源：中国物理快报（英文版） 年份：2007
Total ionizing dose effects of Si+ ion implanted thermal oxides are studied by 10keV x-ray irradiation. Photo-luminescence (PL) method is engaged to investigate...
[期刊论文] 作者：Zheng Zhong-Shan,Liu Zhong-Li,Zhang Guo-Qiang,Li Ning,Fan Kai,Zhang En-Xia,Yi Wan-Bing,Chen Meng,Wang,
来源：中国物理（英文版） 年份：2005
The effect of implanting nitrogen into buried oxide on the top gate oxide hardness against total irradiation does has been investigated with three nitrogen impl...
[期刊论文] 作者：ZHENG Zhong-Shan,LIU Zhong-Li,ZHANG Guo-Qiang,LI Ning,FAN Kai,ZHANG En-Xia,YI Wan-Bing,CHEN Meng,WANG,
来源：中国物理快报（英文版） 年份：2005
Effects of techniques of implanting nitrogen into buried oxide on the characteristics of the partially depleted silicon-on-insulator (SOI) p-channel metal-oxide...
,Improvement of total-dose irradiation hardness of silicon-on-insulator materials by modifying the b
[期刊论文] 作者：Zhang En-Xia,Qian Cong,Zhang Zheng-Xuan,Lin Cheng-Lu,Wang Xi,Wang Ying-Min,Wang Xiao-He,Zhao Gui-Ru,En,
来源：中国物理（英文版） 年份：2006
The hardening of the buried oxide (BOX) layer of separation by implanted oxygen (SIMOX) silicon-on-insulator (SOI) wafers against total-dose irradiation was inv...
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