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Autologous free matrix transplantation for treatment of nail matrix naevi in children: report of fiv
[会议论文] 作者：LI Shu-li,ZHAO Jian-hong,WANG Gang,LI Chun-ying,GAO Tian-wen,
来源：The Second Eastern Asia Dermatology Congress(第二届东亚皮肤科大会) 年份：2012
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Analysis of the decrease of two-dimensional electron gas concentration in GaN-based HEMT caused by p
[期刊论文] 作者：Jin-Jin Tang,Gui-Peng Liu,Jia-Yu Song,Gui-Juan Zhao,Jian-Hong Yang,
来源：中国物理B（英文版） 年份：2021
Gallium nitride(GaN)-based high electron mobility transistors(HEMTs)that work in aerospace are exposed to parti-cles radiation,which can cause the degradation i...
Autologous free matrix transplantation for treatment of nail matrix naevi in children: report of fiv
[会议论文] 作者：LI Shu-li,ZHAO Jian-hong,WANG Gang,LI Chun-ying,GAO Tian-wen,
来源：The Second Eastern Asia Dermatology Congress(第二届东亚皮肤科大会) 年份：2012
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[期刊论文] 作者：ZHAO Jian-hong,张展,宋成盈,王留成,陈杰,徐,
来源：分析试验室 年份：2008
将锌汞齐能还原二硫代二乙酸(DTDGA)成巯基乙酸(TGA)的原理和碘量法滴定相结合,对电还原DTDGA合成TGA反应液中的DTDGA进行定量分析,测定结果的相对标准偏差为0.37%,加标平均...
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