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[期刊论文] 作者:ZHU Xue-Liang,GUO Li-Wei,YU Nai-Sen,PENG Ming-Zeng,YAN Jian-Feng,GE Bing-Hui,JIA Hai-Qiang,CHEN Hong,,
来源:中国物理快报(英文版) 年份:2006
InN and In0.46 Ga0.54N films are grown on sapphire with a GaN buffer by metalorganic chemical vapour deposition (MOCVD). Both high resolution x-ray diffraction...
,Luminescent Characteristics of Near Ultraviolet InGaN/GaN MQWs Grown on Grooved Sapphire Substrates
[期刊论文] 作者:YU Nai-Sen,GUO Li-Wei,CHEN Hong,XING Zhi-Gang,WANG Jing,ZHU Xue-Liang,PENG Ming-Zeng,YAN Jian-Feng,JIA,
来源:中国物理快报(英文版) 年份:2006
InGaN/GaN multiple quantum wells (MQWs) are grown on planar and maskless periodically grooved sapphires by metal organic vapour phase epitaxy (MOCVD). High-reso...
[期刊论文] 作者:PENG Ming-Zeng,GUO Li-Wei,ZHANG Jie,YU Nai-Sen,ZHU Xue-Liang,YAN Jian-Feng,GE Bin-Hui,JIA Hai-Qiang,CHEN,
来源:中国物理快报(英文版) 年份:2008
A three-step growth process is developed for depositing high-quality aluminium-nitride (AIN) epilayers on (001) sapphire by low pressure metalorganic chemical v...
[期刊论文] 作者:YAN Jian-Feng,XING Zhi-Gang,WANG Jing,GUO Li-Wei,ZHU Xue-Liang,PENG Ming-Zeng,YU Nai-Sen,JIA Hai-Qiang,
来源:中国物理快报(英文版) 年份:2007
Canti-bridged epitaxial lateral overgrowth (CBELO) of GaN is performed by metalorganic chemical vapour deposition (MOCVD) on maskless V-grooved sapphire substra...
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