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[期刊论文] 作者：HE Jian-ting ZHUANG Hui-zhao X,
来源：半导体光子学与技术：英文版 年份：2005
Pulsed laser deposition (PLD) is emerging as the most rapid and efficient technique for fabricating the many compound films. ZnO thin films can be prepared unde...
[期刊论文] 作者：ZHUANG Hui-zhao XUE Shou-bin X,
来源：半导体光子学与技术：英文版 年份：2007
ZnO 薄膜在 n-Si (111 ) 上被扔由搏动的激光免职(PLD ) 的底层系统。然后，样品在周围的空中在不同温度被退火，他们的性质特别地作为退火的功能被调查温度。Themicrostructure，...
Formation of GaN Nanowires by Ammoniating Ga2O3 Films Deposited on Oxidized Al Layers on Si Substrat
[期刊论文] 作者：HU Li-jun ZHUANG Hui-zhao XUE,
来源：半导体光子学与技术：英文版 年份：2007
镓氮化物的大数量(轧) nanowires 经由 Ga2O3 电影在一个石英试管在 950 点在氧化的铝层上扔了的 ammoniating 被准备了。当水晶的 wurtzite 由 X 光检查衍射， X 光检查光电子...
[期刊论文] 作者：ZHUANG Hui-zhao LI Bao-li XUE,
来源：半导体光子学与技术：英文版 年份：2008
大规模轧了 nanowires 被 ammoniating Ga2O3 电影成功地在在 850 点在 Si (111 ) 底层上扔的 Nb 层上综合。X 光检查衍射(XRD ) ，扫描电子显微镜学(SEM ) ， field-emssion 传...
[期刊论文] 作者：ZHUANG Hui-zhao,LI Bao-li,XUE,
来源：半导体光子学与技术（英文版） 年份：2008
Large-scale GaN nanowires are successfully synthesized by ammoniating Ga2O3 films on Nb layer deposited on Si(111) substrates at 850 ℃. X-ray diffraction(XRD),...
[期刊论文] 作者：GAO Hai-yong,ZHUANG Hui-zhao,X,
来源：中南工业大学学报（英文版） 年份：2004
A simple and easily operated technique was developed to fabricate GaN films. GaN films possessing hexagonal wurtzite structure were fabricated on Si(111) substr...
[期刊论文] 作者：LIU Hang ZHUANG Hui-zhao XUE C,
来源：半导体光子学与技术：英文版 年份：2009
The chemical vapor deposition(CVD)growth method is applicable to produce high-yield single-crystalline ZnO nanobelts.The Mg-doped ZnO nanobelts with a smooth su...
Formation of GaN Nanowires by Ammoniating Ga2O3 Films Deposited on Oxidized Al Layers on Si Substrat
[期刊论文] 作者：HU Li-jun,ZHUANG Hui-zhao,XUE Cheng-shan,XUE Shou-bin,
来源：城市道桥与防洪 年份：2007
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生、测量监控等方面人手,介绍了S226海滨大桥...
[期刊论文] 作者：XUE Shou-Bin,ZHUANG Hui-Zhao,XUE Cheng-Shan,HU Li-Jun,
来源：中国物理快报（英文版） 年份：2006
Large quantities of GaN nanorods are successfully synthesized on Si(111) substrates by ammoniating the films of Ga2O3/ZnO at 950 ℃ in a quartz tube. The struct...
[期刊论文] 作者：Xue Shou-Bin,Zhuang Hui-Zhao,Xue Cheng-Shan,Hu Li-Jun,Li Bao-Li,Zhang Shi-Ying,
来源：中国物理（英文版） 年份：2007
Flower-shape clustering GaN nanorods are successfully synthesized on Si(lll) substrates through ammoniating Ga2O3/ZnO films at 950°C. The as-grown products are...
[期刊论文] 作者：Qin Li-Xia,Xue Cheng-Shan,Zhuang Hui-Zhao,Yang Zhao-Zhu,Chen Jin-Hua,Li Hong,
来源：中国物理B(英文版) 年份：2008
A mass of GaN nanowires has been successfully synthesized on Si(111) substrates by magnetron sputtering through ammoniating Ga2O3/Co films at 950℃. X-ray diffr...
[期刊论文] 作者：ZHUANG Hui-zhao,XUE Shou-bin,XUE Cheng-shan,HU Li-jun,LI Bao-li,ZHANG Shi-ying,
来源：城市道桥与防洪 年份：2007
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生、测量监控等方面人手,介绍了S226海滨大桥...
[期刊论文] 作者：ZHANG Dong-Dong,XUE Cheng-Shan,ZHUANG Hui-Zhao,HUANG Ying-Long,WANG Zou-Ping,WANG Ying,GUO Yong-Fu,
来源：中国物理快报（英文版） 年份：2008
Mg-doped GaN nanowires have been synthesized by ammoniating Ga2O3 films doped with Mg under flowing ammonia atmosphere at 850℃. The Mg-doped GaN nanowires are...
[期刊论文] 作者：AI Yu-Jie,XUE Cheng-Shan,SUN Li-Li,SUN Chuan-Wei,ZHUANG Hui-Zhao,WANG Fu-Xue,CHEN Jin-Hua,LI Hong,
来源：中国物理快报（英文版） 年份：2006
GaN nanorods in a large scale have been synthesized on Si (111) substrates by ammoniating Ga2Os/Mg films under flowing ammonia atmosphere at the temperature of...
[期刊论文] 作者：HE Jian-ting,ZHUANG Hui-zhao,XUE Cheng-shan,ZHAO jing,TIAN De-heng,WU Yu-xin,LIU Yi-an,XUE Shou-bin,HU,
来源：城市道桥与防洪 年份：2005
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生、测量监控等方面人手,介绍了S226海滨大桥...
[期刊论文] 作者：Fu-Jian,MA Hong-Lei,LIANG Wei,DU Wei,ZHANG Xi-Jian,XIAO Hong-Di,MA Jin,JI Feng,XUE Cheng-Shan,ZHUANG Hui-Zhao,
来源：中国物理快报（英文版） 年份：2005
Thermal gravimetric analysis (TGA) and differential thermal analysis (DTA) are employed to investigate the thermal decomposition behaviour of zinc nitride powde...
[期刊论文] 作者：XUE Cheng-Shan,WU Yu-Xin,ZHUANG Hui-Zhao,TIAN De-Heng,LIU Yi-An,HE Jian-Ting,AI Yu-Jie,SUN Li-Li,WANG,
来源：中国物理快报（英文版） 年份：2006
Syringe-shaped GaN nanorods are synthesized on Si(111) substrates by annealing sputtered Ga2O3/BN films under flowing ammonia at temperature of 950° C. Most of...
[期刊论文] 作者：XUE Cheng-Shan(薛成山),YANG Ying-Ge(杨莺歌),MA Hong-Lei(马洪磊),ZHUANG Hui-Zhao(庄惠照),MA Jin(马瑾),
来源：中国物理快报(英文版) 年份：2003
GaN Nanowires were prepared by the post-nitridation technique. The morphology and structure of GaN nanowires are investigated by transmission-electron microscop...
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