搜索筛选:
搜索耗时0.0767秒,为你在为你在102,285,761篇论文里面共找到 8 篇相符的论文内容
发布年度:
[期刊论文] 作者：Ye Ze,He Jiao,Zhou Rong,Zhang Sufang,,
来源：Electricity 年份：2013
Since 1882, when electricity was first generated and used in Shanghai, the electric industry has experienced a history of continuous formation and development f...
[期刊论文] 作者：Sheng-Hui Zhao,Wang-Hao Tian,Xue-Lian Liang,Ze He,Pei Wang,Lu Ji,Ming He,Hua-Bing Wang,
来源：中国物理B（英文版） 年份：2021
Tl-based superconducting devices have been drawn much attention for their high transition temperature (Tc),which allow the high temperature superconductors (HTS...
Effects of Urbanization,Soil Property and Vegetation Configuration on Soil Infiltration of Urban For
[期刊论文] 作者：WANG Peijiang,ZHENG Haifeng,REN Zhibin,ZHANG Dan,ZHAI Chang,MAO Zhixia,TANG Ze,HE Xingyuan,,
来源：Chinese Geographical Science 年份：2018
Urban forest soil infiltration, affected by various factors, is closely related with surface runoff. This paper studied the effect of urban forest types, vegetation configuration and soil properties o...
Verification of SEU resistance in 65 nm high-performance SRAM with dual DICE interleaving and EDAC m
[期刊论文] 作者：Ze He,Shi-Wei Zhao,Tian-Qi Liu,Chang Cai,Xiao-Yu Yan,Shuai Gao,Yu-Zhu Liu,Jie Liu,
来源：核技术（英文版） 年份：2021
A dual double interlocked storage cell(DICE)interleaving layout static random-access memory(SRAM)is designed and manufactured based on 65 nm bulk com-plementary metal oxide semiconductor technology.The single event upset(SEU)cross sections ......
[期刊论文] 作者：Li-Hua Mo,Bing Ye,Jie Liu,Jie Luo,You-Mei Sun,Chang Cai,Dong-Qing Li,Pei-Xiong Zhao,Ze He,
来源：中国物理B（英文版） 年份：2021
Three-dimensional integrated circuits(3D ICs)have entered into the mainstream due to their high performance,high integration,and low power consumption.When used...
[期刊论文] 作者：Chang CAI,Bingxu NING,Xue FAN,Tianqi LIU,Lingyun KE,Gengsheng CHEN,Jian YU,Ze HE,Liewei XU,Jie LIU,
来源：中国科学：信息科学（英文版） 年份：2022
Dear editor,rnThe static random-access memory(SRAM)-based field pro-grammable gate arrays(FPGAs)mainly composed of ex-tensive configurable logic blocks(CLBs),high-speed em-bedded memories(BRAMs),and a set of programmable routing,wires or sw......
[期刊论文] 作者：Xin Zhang,Sheng-Hui Zhao,Li-Tian Wang,Jian Xing,Sheng-Fang Zhang,Xue-Lian Liang,Ze He,Pei Wang,Xin-Jie,
来源：中国物理B（英文版） 年份：2019
We report the circuit simulations and experiments of millimeter-wave radiation from a high temperature superconduct-ing (HTS) bicrystal Josephson junction (BJJ)...
,Geant4 simulation of proton-induced single event upset in three-dimensional die-stacked SRAM device
[期刊论文] 作者：Bing Ye,Li-Hua Mo,Tao Liu,Jie Luo,Dong-Qing Li,Pei-Xiong Zhao,Chang Cai,Ze He,You-Mei Sun,Ming-Dong Hou,
来源：中国物理B（英文版） 年份：2020
Geant4 Monte Carlo simulation results of the single event upset (SEU) induced by protons with energy ranging from 0.3 MeV to 1 GeV are reported. The SEU cross s...
相关搜索：
