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[期刊论文] 作者：Li Zongzhen,Liu Jie,Zhai Pengf,
来源：中国科学院近代物理研究所和兰州重离子研究装置年报：英文版 年份：2016
The gate dielectric thickness decreases dramatically with the continuous scaling of MOS devices,which has serious consequences on the leakage current and the po...
Investigation of Heavy Ion Irradiation Effects on Microstructural and Optical Properties of Amorphou
[期刊论文] 作者：Li Zongzhen,Liu Jie,Zhai Pengf,
来源：中国科学院近代物理研究所和兰州重离子研究装置年报:英文版 年份：2019
Amorphous HfO2 is widely utilized as high-k gate dielectric materials for reducing the tunneling leakage current and improving the reliability to overcome the p...
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