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搜索耗时0.1100秒,为你在为你在102,285,761篇论文里面共找到 59 篇相符的论文内容
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[期刊论文] 作者：Yuan Kong,Hou-dao Zhang,Yi-men,
来源：化学物理学报 年份：2015
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[期刊论文] 作者：Guo Hui,Zhang Yi-Men,Zhang Yu-Ming,
来源：中国物理（英文版） 年份：2006
The Ti-A1 ohmic contact to n-type 6H-SiC has been fabricated. An array of TLM (transfer length method) test pattes with Au/Ti/Al/Ti/SiC structure is formed on N...
,Numerical simulation of transconductance of AlGaN/GaN heterojunction field effect transistors at hi
[期刊论文] 作者：Chang Yuan-Cheng,Zhang Yi-Men,Zhang Yu-Ming,
来源：中国物理（英文版） 年份：2006
Based on the investigation of the influence of temperatures on parameters, including polarization, electron mobility, thermal conductivity, and conduction band...
[期刊论文] 作者：lü Hong-Liang,Zhang Yi-Men,Zhang Yu-Ming,
来源：中国物理（英文版） 年份：2004
Based on 4H-SiC material parameters, three different analytical expressions are used to characterize the electron mobility as the function of electric field. Th...
[期刊论文] 作者：Cao Quan-Jun,Zhang Yi-Men,Zhang Yu-Ming,
来源：中国物理B(英文版) 年份：2008
A new self-heating effect model for 4H-SiC MESFETs is proposed based on a combination of an analytical and a computer aided design (CAD) oriented drain current...
,The simulation of temperature dependence of responsivity and response time for 6H-SiC UV photodetec
[期刊论文] 作者：Zhang Yi-Men,Zhou Yong-Hua,Zhang Yu-Ming,
来源：中国物理（英文版） 年份：2007
In this paper the temperature dependence of responsivity and response time for 6H-SiC ultraviolet (UV) photodetector is simulated based on numerical model in th...
[期刊论文] 作者：Wang Chao,Zhang Yi-Men,Zhang Yu-Ming,
来源：中国物理（英文版） 年份：2007
A semi-insulating layer is obtained in n-type 4H-SiC by vanadium-ion implantation. A little higher resistivity is obtained by increasing the annealing temperatu...
,Model and analysis of drain induced barrier lowering effect for 4H-SiC metal semiconductor field ef
[期刊论文] 作者：Cao Quan-Jun,Zhang Yi-Men,Jia Li-xin,
来源：中国物理B（英文版） 年份：2009
Based on an analytical solution of the two-dimensional Poisson equation in the subthreshold region.this paperinvestigates the behavior of DIBL(drain induced bar...
[期刊论文] 作者：Tang Xiao-Yan,Zhang Yu-Ming,Zhang Yi-Men,
来源：中国物理B（英文版） 年份：2010
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,Parameter analysis for gate metal-oxide-semiconductor structures of ion-implanted 4H silicon carbid
[期刊论文] 作者：Wang Shou-Guo,Zhang Yi-Men,Zhang Yu-Ming,
来源：中国物理B（英文版） 年份：2010
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[期刊论文] 作者：Jia Ren-Xu,Zhang Yu-Ming,Zhang Yi-Men,
来源：中国物理B（英文版） 年份：2010
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[期刊论文] 作者：Tang Xiao-Yan,Zhang Yi-Men,Zhang Yu-Ming,Gao Jin-Xia,
来源：中国物理（英文版） 年份：2005
A novel SiC Schottky barrier source/drain NMOSFET(SiC SBSD-NMOSFET) with field-induced source/drain(FISD) extension is proposed and demonstrated by numerical si...
,Analysis of the effect of sidewall on the performance of 6H-SiC Schottky barrier source/drain NMOSF
[期刊论文] 作者：Tang Xiao-Yan,Zhang Yi-Men,Zhang Yu-Ming,Gao Jin-Xia,
来源：中国物理（英文版） 年份：2004
Between source/drain and gate of SiC Schottky barrier source/drain MOSFET (SiC SBSD-MOSFET), there must be a sidewall as isolation. The width of sidewall strong...
[期刊论文] 作者：Lü Hong-Liang,Zhang Yi-Men,Zhang Yu-Ming,Che Yong,
来源：中国物理B（英文版） 年份：2008
A thermal model of 4H-SiC MESFET is developed based on the temperature dependences of material parameters and three-region Ⅰ - Ⅴ model. The static current cha...
[期刊论文] 作者：Wang Shou-Guo,Zhang Yan,Zhang Yi-Men,Zhang Yu-Ming,
来源：中国物理B（英文版） 年份：2010
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[期刊论文] 作者：Wang Shou-Guo,Zhang Yan,Zhang Yi-Men,Zhang Yu-Ming,
来源：中国物理B（英文版） 年份：2010
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[期刊论文] 作者：Cheng Ping,Zhang Yu-Ming,Zhang Yi-Men,Guo Hui,
来源：中国物理B（英文版） 年份：2010
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[期刊论文] 作者：Liu Chen,Zhang Yu-Ming,Zhang Yi-Men,Lü Hong-Liang,
来源：中国物理B（英文版） 年份：2013
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[期刊论文] 作者：Guo Hui,Zhang Yi-Men,Qiao Da-Yong,Sun Lei,Zhang Yu-Ming,
来源：中国物理（英文版） 年份：2007
This paper reports that the nickel silicide ohmic contacts to n-type 6H-SiC have been fabricated. Transfer length method test pattes with NiSi/SiC and NiSi2/SiC...
,Formation of the intermediate semiconductor layer for the Ohmic contact to silicon carbide using Ge
[期刊论文] 作者：Guo Hui,Wang Yue-Hu,Zhang Yu-Ming,Qiao Da-Yong,Zhang Yi-Men,
来源：中国物理B（英文版） 年份：2009
By formation of an intermediate semiconductor layer(ISL)with a narrow band gap at the metallic contact/SiCinterface,this paper realises a new method to fabricat...
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