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,Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space
[期刊论文] 作者：Zheng-Xin Wen,Feng Zhang,Zhan-Wei Shen,Jun Chen,Ya-Wei He,Guo-Guo Yan,Xing-Fang Liu,Wan-Shun Zhao,Lei,
来源：中国物理B（英文版） 年份：2019
10-kV 4H–SiC p-channel insulated gate bipolar transistors (IGBTs) are designed, fabricated, and characterized in this paper. The IGBTs have an active area of 2...
[期刊论文] 作者：Zhan-Wei Shen,Feng Zhang,Sima Dimitrijev,Ji-Sheng Han,Guo-Guo Yan,Zheng-Xin Wen,Wan-Shun Zhao,Lei Wang,
来源：中国物理B（英文版） 年份：2017
The interface properties and electrical characteristics of the n-type 4H-SiC planar and trench metal-oxidesemiconductor (MOS) capacitors are investigated by mea...
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