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[期刊论文] 作者：Zhi-Yuan Hu,Zheng-Xuan Zhang,Bing-Xu Ning,Da-Wei Bi,
来源：中国物理B（英文版） 年份：2017
Total ionizing dose induced single transistor latchup effects for 130 nm partially depleted silicon-on-insulator (PDSOI) NMOSFETs with the bodies floating were...
,Enhanced radiation-induced narrow channel effects in 0.13-μm PDSOI nMOSFETs with shallow trench iso
[期刊论文] 作者：Meng-Ying Zhang,Zhi-Yuan Hu,Da-Wei Bi,Li-Hua Dai,Zheng-Xuan Zhang,
来源：中国物理B（英文版） 年份：2018
Total ionizing dose responses of different transistor geometries after being irradiated by 60Co γ-rays,in 0.13-μm partially-depleted silicon-on-insulator (PD...
[期刊论文] 作者：Xin Xie,Da-Wei Bi,Zhi-Yuan Hu,Hui-Long Zhu,Meng-Ying Zhang,Zheng-Xuan Zhang,Shi-Chang Zou,
来源：中国物理B（英文版） 年份：2018
The influence of characteristics’ measurement sequence on total ionizing dose effect in partially-depleted SOI nMOS-FET is comprehensively studied. We find tha...
,Total Ionizing Dose Response of Different Length Devices in 0.13 μm Partially Depleted Silicon-on-I
[期刊论文] 作者：Meng-Ying Zhang,Zhi-Yuan Hu,Zheng-Xuan Zhang,Shuang Fan,Li-Hua Dai,Xiao-Nian Liu,Lei Song,
来源：中国物理快报（英文版） 年份：2017
An anomalous total dose effect that the long length device is more susceptible to total ionizing dose than the short one is observed with the 0.13 μm partially...
[期刊论文] 作者：Li-Hua Dai,Da-Wei Bi,Zhi-Yuan Hu,Xiao-Nian Liu,Meng-Ying Zhang,Zheng-Xuan Zhang,Shi-Chang Zou,
来源：中国物理B（英文版） 年份：2018
Silicon-on-insulator (SOI) devices are sensitive to the total ionizing dose effect due to the existence of buried oxide. In this paper, an extra single-step Si...
[期刊论文] 作者：Li-Hua Dai,Da-Wei Bi,Zheng-Xuan Zhang,Xin Xie,Zhi-Yuan Hu,Hui-Xiang Huang,Shi-Chang Zou,
来源：中国物理快报（英文版） 年份：2018
We perform the total ionizing radiation and electrical stress experiments to investigate the electrical characteristics of the modified silicon-on-insulator (SO...
,Influence of Tilted Angle on Effective Linear Energy Transfer in Single Event Effect Tests for Inte
[期刊论文] 作者：Le-Qing Zhang,Jian Lu,Jia-Ling Xu,Xiao-Nian Liu,Li-Hua Dai,Yi-Ran Xu,Da-Wei Bi,Zheng-Xuan Zhang,
来源：中国物理快报（英文版） 年份：2017
A heavy-ion irradiation experiment is studied in digital storage cells with different design approaches in 130hm CMOS bulk Si and silicon-on-insulator (SO1) tec...
[期刊论文] 作者：CHEN Ming,LUO Hong-Wei,ZHANG Zheng-Xuan,ZHANG En-Xia,YANG Hui,TIAN Hao,WANG Ru,YU Wen-Jie,
来源：中国物理快报（英文版） 年份：2007
Total ionizing dose effects of Si+ ion implanted thermal oxides are studied by 10keV x-ray irradiation. Photo-luminescence (PL) method is engaged to investigate...
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