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[期刊论文] 作者:Zhijun Lyu,Hongliang Lu,Yuming Zhang,Yimen Zhang,Bin Lu,Yi Zhu,Fankang Meng,Jiale Sun, 来源:中国物理B(英文版) 年份:2020
A novel vertical graded source tunnel field-effect transistor (VGS-TFET) is proposed to improve device performance.By introducing a source with linearly graded...
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