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[期刊论文] 作者：Zhongyunshen Zhu,Johannes Svensson,Axel R.Persson,Reine Wallenberg,Andrei V.Gromov,Lars-Erik Wernersson,
来源：纳米研究（英文版） 年份：2020
GaSb-based nanowires in a gate-all-around geometry are good candidates for binary p-type transistors,however they require the introduction of compressive strain...
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