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[期刊论文] 作者：GAO Hai-yong,ZHUANG Hui-zhao,X,
来源：中南工业大学学报（英文版） 年份：2004
A simple and easily operated technique was developed to fabricate GaN films. GaN films possessing hexagonal wurtzite structure were fabricated on Si(111) substr...
[期刊论文] 作者：ZHUANG Hui-zhao,LI Bao-li,XUE,
来源：半导体光子学与技术（英文版） 年份：2008
Large-scale GaN nanowires are successfully synthesized by ammoniating Ga2O3 films on Nb layer deposited on Si(111) substrates at 850 ℃. X-ray diffraction(XRD),...
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