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[期刊论文] 作者：Xiaolong Cai,Chenglin Du,Zixuan Sun,Ran Ye,Haijun Liu,Yu Zhang,Xiangyang Duan,Hai Lu,
来源：半导体学报（英文版） 年份：2021
Gallium nitride (GaN)-based high-electron mobility transistors (HEMTs) are widely used in high power and high frequency application fields,due to the outstandin...
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