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[期刊论文] 作者：JianweiZhao,FengjuanLiu,JianSun,HaiqinHuang,ZuofuHu,XiqingZhang,
来源：ChineseOpticsLetters 年份：2012
Ag/ZnO/Pt structure resistive switching devices are fabricated by radio frequency (RF) magnetron sputtering at room temperature. The memory devices exhibit stable and reversible resistive switching behavior. The ratio of high resistance sta......
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