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利用MOD法在电阻率为5～6 Ω·cm的n-Si(100)衬底采用旋转甩膜工艺制备了Sm0.85Bi3.15Ti3O12(SBT-0.85)铁电薄膜,研究了薄膜的结......
采用传统固相烧结工艺制备了掺杂Ta、Nb的Bi3.15Nd0.85Ti3O12材料,构成Bi3.15Nd0.85Ti3-2x TaxNbxO12（x=0,0.02,0.04,0.06）铁电陶瓷......
