HfOx相关论文
,Resistive switching characteristic and uniformity of low-power HfOx-based resistive random access m
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采用溅射法制备的非晶结构HfO_x薄膜,其平均透射率超过80%,禁带宽度约为5.73 eV。以此制备的ITO/HfO_x/Ti阻变存储器,表现出稳定且......
