【摘 要】
：
The Nano-scratch behavior of nano-scale films of silicon dioxide prepared on silicon substrate made by chemical vapor deposition (CVD) was studied by nano-scratch technique.Four different depth of the
【机 构】
：
National Institute of Metrology,China,Beijing 100013,China
【出 处】
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International Conference on Nanoscience & Technology,China 2
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The Nano-scratch behavior of nano-scale films of silicon dioxide prepared on silicon substrate made by chemical vapor deposition (CVD) was studied by nano-scratch technique.Four different depth of the film were selected, there are 10nm, 20nm, 50nm and 100nm, respectively All size of samples were tested by both Berkovich shape and conical shape indentation tips.It was found that the three processes that occur successively with the increase of load during the scratching are fully elastic recovery, plastic deformation, and delamination of the film.
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