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The metamorphic Al(Ga)InAs buffers grown on (001) GaAs substrates withmisorientations of 2°, 7°and15° toward (111) A by low pressure metalorganic chemical vapor deposition are characterized by high resolution X-ray diffiactometer and atomic force microscopy(AFM).The photoluminescence (PL) spectra of the InP cap layers are measured by an RPM 2000 system with a 980 nm excitation laser.The results indicate an InP layer with the smallest surface roughness of 6.59 nm and the strongest PL intensity is achieved on the 15° off GaAs substrate showing a good control of the treading dislocation in the Al(Ga)InAs buffers.