Over the last decades,researchers have shown remarkable interests in oxides dilute magnetic semiconductors(ODMS)due to their applications in spintronic devices by utilizing both charge and spin [1].
High tunneling magnetoresistance(TMR)is now well known in Fe/MgO/Fe and CoFe(B)/MgO/CoFe(B)magnetic tunnel junctions(MTJs)[1].Besides single barrier MTJs(SBMTJs),double barrier MTJs(DBMTJs)have also b
Domain wall motion driven by spin waves(SWs)in magnetic nanostripes is investigated by micromagnetic simulations.It was found that the velocity of domain wall motion can be controlled by the changes o
A novel antisymmetric exchange coupling called the Dzyaloshinskii–Moriya(DM)interaction has recently attracted great interest.The existence of the DM interaction can induce chiral spin structures such
Multiferroic materials which simultaneously display ferroelectricity and magnetism have attracted much attention due to their interesting new physics and potential for exploring novel multifunctional
Because of the technological importance of spin vales or spin injectors as potential applications of manganite oxides,which induced a larger number of works on manganite thin films.