【摘 要】
：
Nd/Nb co-substituted B3.15Nd0.85Ti3-xNbxO 12(BNTNx,x=0.01,0.03,0.05 and 0.07)thin films were grown on PT/Ti/SiO2/Si(100)substrates by chemical solution deposition.The effects of Nb content on the micr
【机 构】
：
Hunan Provincial Key laboratory of Thin Film Materials and Devices,Xiangtan,411105,China
【出 处】
：
第八届中国功能玻璃学术研讨会暨新型光电子材料国际论坛
论文部分内容阅读
Nd/Nb co-substituted B3.15Nd0.85Ti3-xNbxO 12(BNTNx,x=0.01,0.03,0.05 and 0.07)thin films were grown on PT/Ti/SiO2/Si(100)substrates by chemical solution deposition.The effects of Nb content on the micro-structural,dielectric,ferroelectric,leakage current and capacitive properties of the BNTNx thin films were investigated.A low concentration substitution with Nb ions in BNTNx thin films greatly enhances their remnant polarization(2Pr)and reduces the coercive filed(2Ec)compared with those of the Bi4Ti3O12(BIT)film.The highest 2Pr(71.4 μC/cm2)was observed in the BNTN0.03 thin film at the 2Ec of 202 kV/cm and its aging mechanism was tested by the Raman spectrum and discussed by the defect symmetry conforming principle.Leakage currents of all the films were of the order of 10-6-10-5 A/ema2,showing improved behavior compared with the BIT film.The maximum tunability of 21.0%was also observed in the BNTN0.03 thin film.The dielectric constants at both room temperature and Cure temperature increase initially and then decrease with an increase of Nb content.
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