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报道了一种利用半导体端面泵浦Nd:YVO4晶体并采用电光调Q的短腔激光器。通过理论分析和实验研究,确定了激光器的结构和参数,并证明使用电光调Q技术可以实现亚纳秒脉宽激光输出。在腔长20mm、重复频率为1～100Hz的范围内,获得脉宽小于600ps、单脉冲能量大于0.42mJ以及光束质量M2为1.9的100Hz激光输出,不稳定度小于±3%。
A short cavity laser using semiconductor end-pumped Nd: YVO4 crystal and electro-optic Q-switching is reported. Through the theoretical analysis and experimental research, the structure and parameters of the laser are confirmed, and it is proved that the sub-nanosecond pulse width laser output can be realized by the electro-optical Q-switching technique. 100mm laser output with pulse width less than 600ps, single pulse energy greater than 0.42mJ and beam quality M2 1.9 was obtained with a cavity length of 20mm and a repetition frequency of 1 ~ 100Hz with less than ± 3% instability.