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5. Al doped ZnO Film Fabrication through Electrohydrodynamic Atomization

Al doped ZnO Film Fabrication through Electrohydrodynamic Atomization

来源 :2011年第三届微电子及等离子体技术国际会议 | 被引量 : 0次 | 上传用户：ldbeight

【摘 要】

：

Aluminum doped Zinc Oxide is a transparent conductive oxide and is largely being used as a window layer in CIS/CIGS solar cells.It also finds its applicability in many micro-electronic devices because

【作 者】

：

Nauman Malik Muhammad Navaneethan Duraisamy Hyun-Woo Dang Hyung Chan Kim Dong-Soo Kim Kyung-Hyun Choi 

【机 构】

：

School of Mechatronics Engineering, Jeju National University,Jeju, Korea

【出 处】

：

2011年第三届微电子及等离子体技术国际会议

【发表日期】

：

2011年9期

【关键词】

：

ZnO:AL Opto-electronics Window Layers Electrohydrodynamic Atomization 

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Aluminum doped Zinc Oxide is a transparent conductive oxide and is largely being used as a window layer in CIS/CIGS solar cells.It also finds its applicability in many micro-electronic devices because of its high transmittance and good electrical properties.

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